K4R271669F Datasheet, PDF (18/20 Pages) Samsung semiconductor – 128Mbit RDRAM(F-die)

K4R271669F
Direct RDRAM^™
Absolute Maximum Rating
Table 14: Absolute Maximum Ratings
Symbol
V_I,ABS
V_DD,ABS, V_DDA,ABS
T_STORE
T_MIN
Note*) Refer to T_J,Θ_JC
Parameter
Voltage applied to any RSL or CMOS pin with respect to Gnd
Voltage on VDD and VDDA with respect to Gnd
Storage temperature
Minimum operation temperature
Min
Max
Unit
- 0.3
V_DD+0.3
V
- 0.5
V_DD+1.0
V
- 50
100
°C
0
Note*
°C
I_DD - Supply Current Profile
Table 15: Supply Current Profile
I_DD value
RDRAM Power State and Steady-State Transaction Rates^a
Max
Min
-45
-800
I_DD,PDN
I_DD,NAP
I_DD,STBY
I_DD,REFRESH
I_DD,ATTN
I_DD,ATTN-W
I_DD,ATTN-R
Device in PDN, self-refresh enabled and INIT.LSR=0.
-
Device in NAP.
-
Device in STBY. This is the average for a device in STBY with (1) no packets on the Chan-
nel, and (2) with packets sent to other devices.
-
Device in STBY and refreshing rows at the t_REF,MAX period.
-
Device in ATTN. This is the average for a device in ATTN with (1) no packets on the Chan-
nel, and (2) with packets sent to other devices.
-
Device in ATTN. ACT command every 8•t_CYCLE, PRE command every 8•t_CYCLE, WR
command every 4•t_CYCLE, and data is 1100..1100
-
Device in ATTN. ACT command every 8•t_CYCLE, PRE command every 8•t_CYCLE, RD com-
mand every 4•t_CYCLE, and data is 1111..1111^b
-
5000
4
75
75
115
500
480
a. CMOS interface consumes power in all power states.
b. This does not include the I_OL sink current. The RDRAM device dissipates I_OL•V_OL in each output driver when a logic one is driven.
Table 16: Supply Current at Initialization
Unit
µA
mA
mA
mA
mA
mA
mA
Symbol
I_DD,PWRUP,D
I_DD,SETR,D
Parameter
I_DD from power -on to SETR
I_DD from SETR to CLRR
Allowed Range of t_CYCLE
3.33ns to 3.83ns
2.50ns to 3.32ns
3.33ns to 3.83ns
2.50ns to 3.32ns
V_DD
V_DD,MIN
V_DD,MIN
Min
-
-
Max
150^a
200
250
332
Unit
mA
mA
a. The supply current will be 150mA when t_CYCLE is in the range 15ns to 1000ns.
Page 16
Version 1.41 Jan. 2004