K4R271669F Datasheet, PDF (13/20 Pages) Samsung semiconductor – 128Mbit RDRAM(F-die)

K4R271669F
Direct RDRAM^™
Electrical Characteristics
Table 10: Electrical Characteristics
Symbol
Θ_JC
I_REF
I_OH
I_ALL
∆I_OL
r_OUT
I_OL,NOM
I_I,CMOS
V_OL,CMOS
V_OH,CMOS
Parameter and Conditions
Junction-to-Case thermal resistance
V_REF current @ V_REF,MAX
RSL output high current @ (0≤V_OUT≤V_DD)
RSL I_OL current @ V_OL = 0.9V, V_DD,MIN , T_J,MAXa
RSL I_OL current resolution step
Dynamic output impedance @ V_OL= 0.9V
RSL I_OL current @ V_OL = 1.0V ^b,c
CMOS input leakage current @ (0≤V_I,CMOS≤V_CMOS)
CMOS output voltage @ I_OL,CMOS= 1.0mA
CMOS output high voltage @ I_OH,CMOS= -0.25mA
Min
-
-10
-10
30.0
-
150
26.6
-10.0
-
V_CMOS-0.3
Max
0.5
10
10
90.0
2.0
-
30.6
10.0
0.3
-
Unit
°C/Watt
µA
µA
mA
mA
Ω
mA
µA
V
V
a. This measurement is made in manual current control mode; i.e. with all output device legs sinking current.
b. This measurement is made in automatic current control mode after at least 64 current control calibration operations to a device and after CCA and
CCB are initialized to a value of 64. This value applies to all DQA and DQB pins.
c. This measurement is made in automatic current control mode in a 25Ω test system with V_TERM= 1.714V and V_REF= 1.357V and with the ASYMA
and ASYMB register fields set to 0.
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Version 1.41 Jan. 2004