M378T3354BG3-CD5 Datasheet, PDF (16/22 Pages) Samsung semiconductor – 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-3) (TA=0^oC, VDD= 1.9V)
M391T2953BG(Z)3 / M391T2953BG(Z)0 : 1GB(64Mx8 *18) ECC Module
IDD6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
D5
(DDR2-533@CL=4)
1,530
1,620
144
450
540
540
270
1,260
2,430
2,250
2,385
99
3,105
CC
(DDR2-400@CL=3)
1,440
1,485
144
450
540
540
270
1,170
1,890
1,890
2,250
99
3,015
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input/Output Capacitance (VDD=1.8V, VDDQ=1.8V, TA=25^oC)
Parameter
Non-ECC
Symbol
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
CCK0
CCK1
CCK2
CI1
CI2
CIO
ECC
Symbol
CCK0
Input capacitance, CK and CK
CCK1
CCK2
Input capacitance, CKE and CS
CI₁
Input capacitance, Addr, RAS, CAS, WE
CI₂
Input/output capacitance, DQ, DM, DQS, DQS CIO
* DM is internally loaded to match DQ and DQS identically.
Min
Max
M378T6553BG(Z)3
M378T6553BG(Z)0
-
24
-
25
-
25
-
42
-
42
-
6
M391T6553BG(Z)3
M391T6553BG(Z)0
-
25
-
25
25
-
44
-
44
-
6
Min
Max
M378T2953BG(Z)3
M378T2953BG(Z)0
-
26
-
28
28
-
42
-
42
-
10
M391T2953BG(Z)3
M391T2953BG(Z)0
-
28
-
28
28
-
44
-
44
-
10
Min
Max
M378T3354BG(Z)3
M378T3354BG(Z)0
-
22
-
24
24
-
34
-
34
-
6
Units
pF
Units
pF
Rev. 1.5 Aug. 2005