M378T3354BG3-CD5 Datasheet, PDF (14/22 Pages) Samsung semiconductor – 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0^oC, VDD= 1.9V)
M378T6553BG(Z)3 / M378T6553BG(Z)0 : 512MB(64Mx8 *8) Module
IDD6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
D5
(DDR2-533@CL=4)
800
880
64
200
240
240
120
560
1,600
1,440
1,560
44
2,200
CC
(DDR2-400@CL=3)
760
800
64
200
240
240
120
520
1,160
1,160
1,480
44
2,160
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M378T2953BG(Z)3 / M378T2953BG(Z)0 : 1GB(64Mx8 *16) Module
IDD6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
D5
(DDR2-533@CL=4)
1,360
1,440
128
400
480
480
240
1,120
2,160
2,000
2,120
88
2,760
CC
(DDR2-400@CL=3)
1,280
1,320
128
400
480
480
240
1,040
1,680
1,680
2,000
88
2,680
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.5 Aug. 2005