M378T3354BG3-CD5 Datasheet, PDF (15/22 Pages) Samsung semiconductor – 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC

256MB, 512MB, 1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0^oC, VDD= 1.9V)
M378T3354BG(Z)3 / M378T3354BG(Z)0 : 256MB(32Mx16 *4) Module
IDD6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
D5
(DDR2-533@CL=4)
480
580
32
100
120
120
60
280
920
820
780
22
1,560
CC
(DDR2-400@CL=3)
460
500
32
100
120
120
60
260
740
680
740
22
1,500
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M391T6553BG(Z)3 / M391T6553BG(Z)0 : 512MB(64Mx8 *9) ECC Module
IDD6
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
Normal
IDD7
D5
(DDR2-533@CL=4)
900
990
72
225
270
270
135
630
1,800
1,620
1,755
50
2,475
CC
(DDR2-400@CL=3)
855
900
72
225
270
270
135
585
1,305
1,305
1,665
50
2,430
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.5 Aug. 2005