SCT2H12NY Datasheet, PDF (9/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NY
Electrical characteristic curves
Fig.15 Typical Capacitance
vs. Drain - Source Voltage
1000
C_iss
100
C_oss
10
T_a = 25ºC
f = 1MHz
V_GS = 0V
1
0.1
1
C_rss
10
100
1000
Drain - Source Voltage : V_DS [V]
Datasheet
Fig.16 Coss Stored Energy
7
T_a = 25ºC
6
5
4
3
2
1
0
0
200 400 600 800 1000
Drain - Source Voltage : V_DS [V]
Fig.17 Switching Characteristics
1000
t_f
T_a = 25ºC
V_DD = 500V
V_GS = 18V
R_G = 0
Pulsed
100
t_d(off)
t_r
10
0.1
t_d(on)
1
10
Drain Current : I_D [A]
Fig.18 Dynamic Input Characteristics
20
18 ^Ta ^{= 25ºC}
V_DD = 500V
16 _{ID = 1A}
Pulsed
14
12
10
8
6
4
2
0
0246
8 10 12 14 16
Total Gate Charge : Q_g [nC]
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2017.07 - Rev.B