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| SCT2H12NY Datasheet, PDF (10/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2H12NY
ï¬Electrical characteristic curves
Datasheet
Fig.19 Typical Switching Loss
vs. Drain - Source Voltage
100
90
Ta = 25ºC
ID=1.1A
80
VGS = 18V/0V
70
RG=0ï
L=2mH
Eon
60
50
40
30
Eoff
20
10
0
500 600 700 800 900 1000 1100
Drain - Source Voltage : VDS [V]
Fig.20 Typical Switching Loss
vs. Drain Current
250
Ta = 25ºC
VDD=800V
200 VGS = 18V/0V
RG=0ï
L=2mH
150
Eon
100
50
Eoff
0
0
1
2
3
4
5
Drain Current : ID [A]
Fig.21 Typical Switching Loss
vs. External Gate Resistance
140
Ta = 25ºC
120
VDD=800V
ID=1.1A
Eon
100
VGS = 18V/0V
L=2mH
80
60
40
Eoff
20
0
0
20
40
60
80 100
External Gate Resistance : RG [ï]
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© 2016 ROHM Co., Ltd. All rights reserved.
10/12
2017.07 - Rev.B
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