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| SCT2H12NY Datasheet, PDF (2/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2H12NY
ï¬Thermal resistance
Parameter
Thermal resistance, junction - case
Datasheet
Symbol
RthJC
Values
Unit
Min. Typ. Max.
-
2.65 3.45 °C/W
ï¬Electrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Drain - Source breakdown
voltage
V(BR)DSS VGS = 0V, ID = 1mA
1700
-
-
V
Zero gate voltage
drain current
Gate - Source leakage current
Gate - Source leakage current
Gate threshold voltage
VDS = 1700V, VGS = 0V
IDSS Tj = 25°C
-
Tj = 150°C
-
IGSSï« VGS = ï«22V, VDS = 0V
-
IGSSï VGS = ï6V, VDS = 0V
-
VGS (th) VDS = VGS, ID = 0.41mA 1.6
0.1
10
ïA
0.2
-
-
100 nA
-
ï100 nA
2.8 4.0
V
*1 Limited only by maximum temperature allowed.
*2 PW ï£ 10ïs, Duty cycle ï£ 1%
*3 Example of acceptable Vgs waveform
*4 Pulsed
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
2/12
2017.07 - Rev.B
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