SCT2H12NY Datasheet, PDF (3/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NY
Datasheet
Electrical characteristics (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Static drain - source
on - state resistance
V_GS = 18V, I_D = 1.1A
R_DS(on) ^{*4 T}_j ^{= 25°C}
T_j = 125°C
-
1.15 1.5

-
1.71
-
Gate input resistance
Transconductance
Input capacitance
R_G f = 1MHz, open drain
-
64
-

g_fs ^{*4 V}_DS ^{= 10V, I}_D ^{= 1.1A}
-
0.4
-
S
C_iss
V_GS = 0V
-
184
-
Output capacitance
C_oss V_DS = 800V
-
16
-
pF
Reverse transfer capacitance
C_rss f = 1MHz
-
6
-
Effective output capacitance,
energy related
C_o(er)
V_GS = 0V
V_DS = 0V to 800V
-
17
-
pF
Turn - on delay time
Rise time
Turn - off delay time
Fall time
t_d(on) ^{*4 V}_DD ^{= 500V, I}_D ^{= 1.1A}
-
16
-
t_r ^*4
t_d(off) ^*4
V_GS = 18V/0V
R_L = 455
-
21
-
ns
-
35
-
t_f ^*4
R_G = 0
-
74
-
Turn - on switching loss
Turn - off switching loss
E_on ^*4
V_DD = 800V, I_D=1.1A
V_GS = 18V/0V
-
57
-
R_G = 0, L=2mH
µJ
E_off ^*4
*E_on includes diode
reverse recovery
-
32
-
Gate Charge characteristics (T_a = 25C)
Parameter
Symbol
Conditions
Total gate charge
Gate - Source charge
Gate - Drain charge
Gate plateau voltage
Q_g ^{*4 V}_DD ^{= 500V}
Q_gs ^*4
Q_gd ^*4
I_D = 1A
V_GS = 18V
V_(plateau) V_DD = 500V, I_D = 1A
Values
Unit
Min. Typ. Max.
-
14
-
-
4
-
nC
-
5
-
-
10.5
-
V
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2017.07 - Rev.B