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| SCT2H12NY Datasheet, PDF (11/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2H12NY
ï¬Electrical characteristic curves
Datasheet
Fig.22 Inverse Diode Forward Current
vs. Source - Drain Voltage
10
VGS = 0V
Pulsed
1
Ta = 175ºC
Ta = 125ºC
Ta = 75ºC
Ta = 25ºC
Ta = ï25ºC
0.1
Fig.23 Reverse Recovery Time
vs.Inverse Diode Forward Current
1000
Ta = 25ºC
di / dt = 300A / ïs
VR = 800V
VGS = 0V
Pulsed
100
0.01
012345678
Source - Drain Voltage : VSD [V]
10
1
10
Inverse Diode Forward Current : IS [A]
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
11/12
2017.07 - Rev.B
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