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| SCT2H12NY Datasheet, PDF (1/14 Pages) Rohm – N-channel SiC power MOSFET | |||
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SCT2H12NY
N-channel SiC power MOSFET
Datasheet
VDSS
RDS(on) (Typ.)
ID
PD
1700V
1.15ï
4A
44W
ï¬Features
1) Low on-resistance
2) Fast switching speed
3) Long creepage distance with no center lead
4) Simple to drive
5) Pb-free lead plating ; RoHS compliant
ï¬Application
ã»Auxilialy power supplies
ã»Switch mode power supplies
ï¬Outline
TO-268-2L
(2)
ï¬Inner circuit
(1) (3)
(2)
(1) Gate
(2) Drain
*1
(3) Source
(1)
*1 Body Diode
(3)
ï¬Packaging specifications
Packing
Embossed tape
Reel size (mm)
330
Tape width (mm)
24
Type
Basic ordering unit (pcs)
400
Taping code
TB
Marking
SCT2H12NY
ï¬Absolute maximum ratings (Ta = 25°C)
Parameter
Drain - Source voltage
Continuous drain current
Tc = 25°C
Tc = 100°C
Pulsed drain current
Gate - Source voltage (DC)
Gate - Source surge voltage (tsurge<300nsec)
Power dissipation (Tc = 25°C)
Junction temperature
Range of storage temperature
Symbol
Value
Unit
VDSS
1700
V
ID *1
4
A
ID *1
2.9
A
ID,pulse *2
10
A
VGSS
ï6 to 22
V
VGSS_surge *3
ï10 to 26
V
PD
44
W
Tj
175
°C
Tstg
ï55 to ï«175
°C
www.rohm.com
© 2016 ROHM Co., Ltd. All rights reserved.
1/12
2017.07 - Rev.B
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