SCT2H12NY Datasheet, PDF (8/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NY
Electrical characteristic curves
Datasheet
Fig.12 Static Drain - Source On - State
Resistance vs. Gate Source Voltage
3
T_a = 25ºC
2.5
Pulsed
2
I_D = 2.2A
1.5
I_D = 1.1A
1
0.5
0
8 10 12 14 16 18 20 22
Gate - Source Voltage : V_GS [V]
Fig.13 Static Drain - Source On - State
Resistance vs. Junction Temperature
3
V_GS = 18V
2.5 ^Pulsed
2
1.5
I_D = 2.2A
1
I_D = 1.1A
0.5
0
-50
0
50 100 150 200
Junction Temperature : T_j [ºC]
Fig.14 Static Drain - Source On - State
Resistance vs. Drain Current
10
V_GS = 18V
Pulsed
1
0.1
0.1
T_a = 175ºC
T_a = 125ºC
T_a = 75ºC
T_a = 25ºC
T_a = 25ºC
1
10
Drain Current : I_D [A]
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2017.07 - Rev.B