SCT2H12NY Datasheet, PDF (4/14 Pages) Rohm – N-channel SiC power MOSFET

SCT2H12NY
Datasheet
Body diode electrical characteristics (Source-Drain) (T_a = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min. Typ. Max.
Inverse diode continuous,
forward current
Inverse diode direct current,
pulsed
Forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I_S ^*1
I_SM ^*2
T_c = 25°C
V_SD ^*4
t_rr ^*4
Q_rr ^*4
I_rrm ^*4
V_GS = 0V, I_S = 1.1A
I_F = 1.1A, V_R = 800V
di/dt = 300A/s
-
-
4
A
-
-
10
A
-
4.3
-
V
-
21
-
ns
-
13
-
nC
-
1.1
-
A
Typical Transient Thermal Characteristics
Symbol
Value
Unit
R_th1
493m
R_th2
1601m
K/W
R_th3
556m
Symbol
C_th1
C_th2
C_th3
Value
378µ
1.42m
65.6m
Unit
Ws/K
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2017.07 - Rev.B