RX111_16 Datasheet, PDF (97/127 Pages) Renesas Technology Corp – 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory

RX111 Group
5.4 USB Characteristics
5. Electrical Characteristics
Table 5.37 USB Characteristics (USB0_DP and USB0_DM Pin Characteristics)
Conditions: 3.0 V ≤ VCC = VCC_USB ≤ 3.6 V, 3.0 V ≤ AVSS0 ≤ 3.6 V, VSS = AVSS0 = VSS_USB = 0 V, T_a = –40 to +105°C
Item
Symbol
Min.
Max.
Unit
Test Conditions
Input
Input high level voltage
V_IH
2.0
characteristics
Input low level voltage
V_IL
—
Differential input sensitivity
V_DI
0.2
Differential common mode
V_CM
0.8
range
—
V
0.8
V
—
V | USB0_DP – USB0_DM |
2.5
V
Output
Output high level voltage
V_OH
characteristics
Output low level voltage
V_OL
2.8
VCC_USB
V I_OH = –200 μA
0.0
0.3
V I_OL= 2 mA
Cross-over voltage
V_CRS
1.3
Rise time
FS
t_r
4
2.0
V
20
ns
Figure 5.54
Figure 5.55
LS
75
300
Fall time
FS
t_f
4
LS
75
20
ns
300
Rise/fall time ratio FS
t_r/t_f
90
LS
80
111.11
125
% t_r/t_f
Output resistance
Z_DRV
28
44
Ω (Adjusting the resistance of
external elements is not
necessary.)
VBUS
characteristics
VBUS input voltage
VBUS (P16) input leakage
current
V_IH
V_IL
| I_VBUSIN |
VCC × 0.8
—
—
—
VCC × 0.2
10
V
V
μA USB0_VBUS = 5.5V
Pull-up,
pull-down
Pull-down resistor
Pull-up resistor
Battery Charging
Specification
Ver 1.2
USB0_DP sink current
USB0_DM sink current
DCD source current
Data detection voltage
USB0_DP source current
USB0_DM source current
R_PD
R_PUI
R_PUA
I_{DP_SINK}
I_{DM_SINK}
I_{DP_SRC}
V_{DAT_REF}
V_{DP_SRC}
V_{DM_SRC}
14.25
0.9
1.425
25
25
7
0.25
0.5
0.5
24.80
1.575
3.09
175
175
13
0.4
0.7
0.7
kΩ
kΩ During idle state
kΩ During reception
μA
μA
μA
V
V Output current = 250 μA
V Output current = 250 μA
USB0_DP, ^VCRS
USB0_DM
10%
90%
t_r
Figure 5.54 USB0_DP and USB0_DM Output Timing
90%
10%
t_f
R01DS0190EJ0130 Rev.1.30
May 31, 2016
Page 97 of 127