RX111_16 Datasheet, PDF(124/127 Page) Renesas Technology Corp – 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory

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RX111_16 Datasheet, PDF (124/127 Pages) Renesas Technology Corp – 32 MHz 32-bit RX MCUs, 50 DMIPS, up to 512 Kbytes of flash memory

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RX111 Group

REVISION HISTORY

Classifications

- Items with Technical Update document number: Changes according to the corresponding issued Technical Update

- Items without Technical Update document number: Minor changes that do not require Technical Update to be issued

Rev.

1.30

Date

May 31, 2016

Description

Page

Summary

1. Overview

18 to 26 Table 1.5 to 1.9 Note 2 regarding I/O power source is AVCC0 for the ports

(P4, PJ6, and PJ7), added

5. Electrical Characteristics

Table 5.1 Absolute Maximum Ratings, Analog power supply voltage added

Table 5.2 Recommended Operating Conditions, VREFH0 / VREFL0 added

Figure 5.4 Voltage Dependency in High-Speed Operating Mode (Reference

Data) added

Figure 5.5 Voltage Dependency in Middle-Speed Operating Mode

(Reference Data) added

Figure 5.6 Voltage Dependency in Low-Speed Operating Mode (Reference

Data) added

Table 5.9 DC Characteristics (7), Increment for IWDT operation added

Table 5.10 DC Characteristics (8), Increment for IWDT operation added

Figure 5.9 Voltage Dependency in Software Standby Mode (Reference Data)

added

Figure 5.10 Temperature Dependency in Software Standby Mode

(Reference Data) added

Table 5.11 DC Characteristics (9) added

Table 5.12 DC Characteristics (10), LDV1, 2 added

66, 67

Table 5.18 Permissible Output Currents is divided into D version and G

version

110

Table 5.49 ROM (Flash Memory for Code Storage) Characteristics (2),

Erasure time - 256-Kbyte added

111

Table 5.50 ROM (Flash Memory for Code Storage) Characteristics (3),

Temperature range for the programming/erasure operation changed

and Erasure time - 256-Kbyte added

112

Table 5.52 E2 DataFlash Characteristics (2), Low speed FCLK changed

and Erasure time - 8-Kbyte added

112

Table 5.53 E2 DataFlash Characteristics (3),

Temperature range for the programming/erasure operation changed,

Low speed FCLK changed

and Erasure time - 8-Kbyte added

113, 114 5.12 Usage Notes added

Classification

TN-RX*-A134A/E

TN-RX*-A132A/E

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R01DS0190EJ0130 Rev.1.30

May 31, 2016

Page 124 of 127

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