HAT3018R_15 Datasheet, PDF (9/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
• P Channel
Maximum Safe Operation Area
–100
–30
–10
–3
–1
–0.3
–0.1
–0.03
10 _µs
100
OthpiseararetioaDniCsinOperation^P(WPW=_≤¹₁⁰¹₀N^mm_sot)e^ss₆
µ_s
limited by R_DS(on)
–0.01 _{Ta = 25°C}
–0.003 ^{1 shot Pulse}
1 Drive Operation
–0.001
–0.1 –0.3 –1 –3
–10 –30 –100
Drain to Source Voltage V_DS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
–10
V_DS = –10 V
Pulse Test
–8
–6
–4
–2
Tc = 75°C
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1 ^{VGS = –4.5 V}
0.05
–10 V
0.02
0.01
–1
–3
–10
–30
Drain Current I_D (A)
–100
Typical Output Characteristics
–10
–10 V
Pulse Test
–8
–6 V
–4.5 V
–3.5 V
–6
–4
–2
V_GS = –2.5 V
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
–1
Pulse Test
–0.8
–0.6
–0.4
I_D = –5 A
–0.2
0
0
–2 A
–1 A
–4 –8 –12 –16 –20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
0.15
V_GS = –4.5 V
0.10
–5 A
I_D = –1, –2 A
–5 A
0.05
–10 V
–1, –2 A
0
–40 0
40 80 120 160
Case Temperature Tc (°C)
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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