HAT3018R_15 Datasheet, PDF (6/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
Main Characteristics
• N Channel
Maximum Safe Operation Area
100
30
10
3
1
0.3
0.1
0.03
10 _µs
DC _Operation
Operation in
this area is
PW
(PW _≤
=
10
100
1 _ms
10 _ms
Note6
s)
µ_s
limited by R_DS(on)
0.01 _{Ta = 25°C}
0.003 ^{1 shot Pulse}
1 Drive Operation
0.001
0.1 0.3 1 3
10 30 100
Drain to Source Voltage V_DS (V)
Note 6: When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
25°C
Tc = 75°C
2
–25°C
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05 V_GS = 4.5 V
0.02
0.01
1
10 V
3
10
30
100
Drain Current I_D (A)
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
Page 4 of 11
Typical Output Characteristics
10
10 V
4V
8
Pulse Test
6
3V
4
2
V_GS = 2.5 V
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.3
Pulse Test
0.2
I_D = 5 A
0.1
2A
1A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1, 2 ,5 A
0.06
V_GS = 4.5 V
0.04
1, 2, 5 A
0.02
10 V
0
-40
0
40 80 120 160
Case Temperature Tc (°C)