HAT3018R_15 Datasheet, PDF (11/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
2.5
I_AP = –5 A
2.0
V_DD = –25 V
duty < 0.1 %
Rg ≥ 50 Ω
1.5
1.0
0.5
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
RL
Vin
-10 V
V_DD
= -30 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
t_d(on)
10%
tr
td(off)
10%
t_f
Vin
-15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D. U. T
V_DD
Avalanche Waveform
E_AR = ¹ L • I_AP2 •
2
V_DSS
V_DSS - V_DD
I_AP
I_D
V_(BR)DSS
V_DD
V_DD
0
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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