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HAT3018R_15 Datasheet, PDF (10/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching | |||
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HAT3018R, HAT3018RJ
Forward Transfer Admittance vs.
Drain Current
50
20
10
Tc = â25°C
5
2
25°C
75°C
1
VDS = â10 V
Pulse Test
0.5
â0.1 â0.3 â1 â3 â10 â30 â100
Drain CurrentID (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
Ciss
500
200
100
Coss
50
20 VGS = 0
f = 1 MHz
Crss
10
0 â10 â20 â30 â40 â50
Drain to Source Voltage VDS (V)
Reverse Drain Current vs.
Source to Drain Voltage
â10
â8
â10 V
â6
Pulse Test
â5 V
â4
â2
VGS = 0, 5 V
0
0 â0.4 â0.8 â1.2 â1.6 â2.0
Source to Drain Voltage VSD (V)
1000
500
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
200
100
50
20
10
â0.1 â0.3 â1 â3 â10 â30 â100
Reverse Drain Current IDR (A)
Dynamic Input Characteristics
0
0
VDD = â10V
â25V
â20
â50V
â4
ID = â5 A
â40
â8
VDS
â60
VDD = â10 V
â25 V
â80
â50 V
VGS
â12
â16
â100
0
8
16 24 32
Gate Charge Qg (nc)
-20
40
1000
Switching Characteristics
300
100
td(off)
tr
30
td(on)
10
tf
3
1
â0.1 â0.3
VGS = â10 V, VDD = â30 V
PW = 5 µs, duty ⤠1 %
â1 â3 â10 â30 â100
Drain Current ID (A)
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
Page 8 of 11
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