HAT3018R_15 Datasheet, PDF (12/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
• In common
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm) PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
50
100
150
200
Case Temperature Tc (°C)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.1
0.01
0.001
0.05
0.02
0.01
1shot ^pulse
0.0001
10 µ 100 µ 1 m 10 m 100 m
θch - f(t) = γs (t) × θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P_DM
D=
PW
T
PW
T
1 10 100 1000 10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
0.1
0.01
D=1
0.5
0.2
0.1
0.05
0.02
0.01
0.001
1shot ^pulse
0.0001
10 µ 100 µ 1 m
θch - f(t) = γs (t) × θch - f
θch - f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
P_DM
D=
PW
T
PW
T
10 m 100 m 1 10
Pulse Width PW (S)
100 1000 10000
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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