HAT3018R_15 Datasheet, PDF (4/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
Absolute Maximum Ratings
Ratings
Item
Symbol
HAT3018R
HAT3018RJ
Nch
Pch
Nch
Pch
Drain to source voltage
V_DSS
60
–60
60
–60
Gate to source voltage
V_GSS
±20
±20
±20
±20
Drain current
I_D
6
Drain peak current
I_D (pulse)^Note1
48
Avalanche current
I_APNote4
—
Avalanche energy
E_ARNote4
—
Channel dissipation
Pch^Note2
2
Channel dissipation
Pch^Note3
3
–5
6
–5
–40
48
–40
—
6
–5
—
3.08
2.14
2
2
2
3
3
3
Channel temperature
Tch
150
150
150
150
Storage temperature
Tstg
–55 to +150 –55 to +150 –55 to +150 –55 to +150
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
mJ
W
W
°C
°C
Electrical Characteristics
• N Channel
Item
Symbol Min
Drain to source breakdown voltage V_(BR)DSS
60
Gate to Source breakdown voltage V_(BR)GSS ±20
Zero gate voltage drain current
I_DSS
—
Zero gate voltage HAT3018R
I_DSS
—
drain current
HAT3018RJ
I_DSS
—
Gate to source leak current
I_GSS
—
Gate to source cutoff voltage
V_GS(off)
1.5
Forward transfer admittance
|y_fs|
6
Static drain to source on state
R_DS(on)
—
resistance
R_DS(on)
—
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body-drain diode forward voltage
V_DF
—
Body-drain diode reverse recovery
t_rr
—
time
Notes: 5. Pulse test
Typ
—
—
—
—
—
—
—
9.5
28
40
1000
145
85
15
2
3
12
10
60
11
0.82
40
Max
—
—
1
—
10
±10
2.5
—
35
50
—
—
—
—
—
—
—
—
—
—
1.07
—
Unit
V
V
µA
µA
µA
µA
V
S
mΩ
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
I_G = ±100 µA, V_DS = 0
V_DS = 60 V, V_GS = 0
V_DS = 48 V, V_GS = 0
Ta = 125°C
V_GS = ±16 V, V_DS = 0
V_DS = 10 V, I_D = 1 mA
I_D = 3 A^{Note 5}, V_DS = 10 V
I_D = 3 A^{Note 5}, V_GS = 10 V
I_D = 3 A^{Note 5}, V_GS = 4.5 V
V_DS = 10 V, V_GS = 0
f = 1 MHz
V_DD = 25 V
V_GS = 10 V
I_D = 6 A
V_GS = 10 V, I_D= 3 A
V_DD ≅ 30 V
R_L = 10 Ω
R_G = 4.7 Ω
I_F = 6 A, V_GS = 0^{Note 5}
I_F = 6 A, V_GS = 0
di_F/dt = 100 A/ µs
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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