HAT3018R_15 Datasheet, PDF (8/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
4.0
I_AP = 6 A
3.2
V_DD = 25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
2.4
1.6
0.8
0
25 50
75 100 125 150
Channel Temperature Tch (°C)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 30V
Switching Time Waveform
Vin
Vout
10%
10%
90%
td(on)
tr
90%
90%
td(off)
10%
tf
Vin
15 V
Avalanche Test Circuit
V_DS
Monitor
Rg
50 Ω
L
I_AP
Monitor
D. U. T
V_DD
Avalanche Waveform
E_AR =
1
2
• L • I_AP2 •
V_DSS
V_DSS – V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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