HAT3018R_15 Datasheet, PDF (3/14 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOS FET High Speed Power Switching

HAT3018R, HAT3018RJ
Silicon N/P Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV>)
8 ^{7 65}
2
1 ²³⁴
G
78
DD
4
G
56
DD
S1
MOS1
Nch
S3
MOS2
Pch
REJ03G0127-0200
Rev.2.00
Nov 04, 2008
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
REJ03G0127-0200 Rev.2.00 Nov 04, 2008
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