FY4AEJ-03 Datasheet, PDF (9/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7
5
3
2
10⁰
7
VGS = –10V
5
ID = –4A
Pulse Test
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
0.8
ID = –1mA
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
–4.0
–3.2
–2.4
VDS = –10V
ID = –1mA
–1.6
–0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10²
7
5
D = 1.0
3
0.5
2
10¹
0.2
7
5
0.1
3 ^0.05
2
0.02
10⁰
7
0.01
5 _{Single Pulse}
3
2
PDM
tw
T
D= ^tw
T
10^–1
10^–4 2 3 5 710^–3 2 3 5 710^–2 2 3 5710^–1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710² 2 3 5 710³
PULSE WIDTH tw (s)
Aug. 1999