FY4AEJ-03 Datasheet, PDF (8/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
TRANSFER CHARACTERISTICS
(TYPICAL)
–20
–16
–12
Tc = 25°C
–8
VDS = –10V
Pulse Test
–4
0
0
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
Ciss
7
5
3
Coss
2
10²
Crss
7
5 ^{Tch = 25°C}
VGS = 0V
3 f = 1MHZ
2
–10^–1 –2 –3 –5 –7 –10⁰ –2 –3 –5 –7–10¹ –2
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
–10
VDS =
–10V
–8
–20V
–25V
–6
–4
–2
Tch = 25°C
ID = –4A
0
0 4 8 12 16 20 24
GATE CHARGE Qg (nC)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
3
2
10¹
7
5
3
VDS = –10V
Pulse Test
2
TC = 25°C 75°C 125°C
10⁰
–10⁰ –2 –3 –5 –7 –10¹ –2 –3 –5 –7 –10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10²
7
td(off)
5
3
2
10¹
7
5
3
2
10⁰
–10^–1
tf
td(on)
tr
–2 –3
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
–5 –7 –10⁰ –2 –3 –5 –7 –10¹
DRAIN CURRENT ID (A)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
TC =
–16
125°C
75°C
25°C
–12
–8
VGS = 0V
Pulse Test
–4
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
SOURCE-DRAIN VOLTAGE VSD (V)
Aug. 1999