FY4AEJ-03 Datasheet, PDF (2/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

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FY4AEJ-03
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
OUTLINE DRAWING
“

Dimensions in mm
q 4V DRIVE
q VDSS ............................................................................... ±30V
q rDS (ON) (MAX) ........................................................ 30/80mΩ
q ID ......................................................................................... ±4A
APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc
Œ

5.0
1.8 MAX.
0.4
1.27
’“

Œ Ž SOURCE
  GATE
 ‘ ’ “ DRAIN
Ž

Œ
‘
SOP-8
MAXIMUM RATINGS (Tc = 25°C)
Symbol
Parameter
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
—
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Weight
VGS = 0V
VDS = 0V
L = 10µH
Typical value
Conditions
Ratings
Unit
n-ch
p-ch
30
–30
V
±20
±20
V
4
–4
A
28
–28
A
4
–4
A
1.7
–1.7
A
6.8
–6.8
A
1.6
1.6
W
–55~+150
°C
–55~+150
°C
0.07
g
Aug. 1999