FY4AEJ-03 Datasheet, PDF (6/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
10¹
7
5
3
2
10⁰
7
VGS = 10V
5
ID = 4A
Pulse Test
3
2
10^–1
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
0.8
ID = 1mA
Pulse Test
0.6
0.4
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
4.0
3.2
VDS = 10V
ID = 1mA
Pulse Test
2.4
1.6
0.8
0
–50 0
50 100 150
CHANNEL TEMPERATURE Tch (°C)
10²
7
5
D = 1.0
3
0.5
2
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
10¹
0.2
7
5
0.1
3 ^0.05
2
0.02
10⁰
0.01
7
5 _{Single Pulse}
3
2
PDM
tw
T
D= ^tw
T
10^–1_{10–4 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103}
PULSE WIDTH tw (s)
Aug. 1999