FY4AEJ-03 Datasheet, PDF (4/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
PERFORMANCE CURVES (N-ch)
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =10V,8V,6V,5V
20
4V
16
12
Tc = 25°C
Pulse Test
8
3V
4
PD = 1.6W
0
0 0.2 0.4 0.6 0.8 1.0
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
1.0
Tc = 25°C
Pulse Test
0.8
0.6
0.4
ID = 8A
0.2
4A
2A
0
0
2
4
6
8
10
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
MAXIMUM SAFE OPERATING AREA
5
3
tw = 10µs
2
10¹
100µs
7
5
3
1ms
2
10⁰
7
5
3 TC = 25°C
2 _{Single Pulse}
10^–1
7
5
3
23
5 7 10⁰
23
5 7 10¹
10ms
100ms
DC
23 5
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 10V,8V,6V,5V
4V
8
6
3V
4
PD = 1.6W
2
0
0
0.1 0.2 0.3 0.4 0.5
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
80
60
VGS = 4V
40
10V
20
0
10^–1 2 3 5 710⁰ 2 3 5 710¹ 2 3 5 710²
DRAIN CURRENT ID (A)
Aug. 1999