FY4AEJ-03 Datasheet, PDF (5/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
TRANSFER CHARACTERISTICS
(TYPICAL)
20
16
12
Tc = 25°C
8
VDS = 10V
Pulse Test
4
0
0
2
4
6
8 10
GATE-SOURCE VOLTAGE VGS (V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
10³
7
Ciss
5
3
Coss
2
10²
7
5 ^{Tch = 25°C}
VGS = 0V
3 f = 1MHZ
2
10^–1 2 3 5 7 10⁰
23
Crss
5 7 10¹ 2
DRAIN-SOURCE VOLTAGE VDS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
10
8
6
VDS =
15V
4
20V
25V
2
Tch = 25°C
ID =4A
0
0
4
8
12 16 20
GATE CHARGE Qg (nC)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
10²
7
5
3
2
10¹
7
5
VDS =10V
Pulse Test
3
TC = 25°C,75°C,125°C
2
10⁰
10⁰ 2 3 5 7 10¹ 2 3 5 7 10²
DRAIN CURRENT ID (A)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
10² tf
7
5
3
2
td(off)
tr
10¹
7
5
3
2
10⁰
10^–1 2 3
td(on)
Tch = 25°C
VGS = 10V
VDD = 15V
RGEN = RGS = 50Ω
5 7 10⁰ 2 3 5 7 10¹
DRAIN CURRENT ID (A)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
20
VGS = 0V
Pulse Test
16
TC =
12
125°C
75°C
8
25°C
4
0
0
0.4 0.8 1.2 1.6 2.0
SOURCE-DRAIN VOLTAGE VSD (V)
Aug. 1999