FY4AEJ-03 Datasheet, PDF (3/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
N-ch
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 4A, VGS = 10V
ID = 2A, VGS = 4V
ID = 4A, VDS = 10V
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
IS = 1.7A, VGS = 0V
Channel to ambiet
IS = 1.7A, dis/dt = –50A/µs
Limits
Unit
Min.
Typ.
Max.
30
—
—
V
—
—
±0.1 µA
—
—
0.1
mA
1.0
1.5
2.0
V
—
23
30
mΩ
—
40
55
mΩ
—
8
—
S
—
550
—
pF
—
220
—
pF
—
115
—
pF
—
12
—
ns
—
20
—
ns
—
40
—
ns
—
40
—
ns
—
0.75 1.10
V
—
—
78.1 °C/W
—
100
—
ns
P-ch
Symbol
Parameter
Test conditions
V (BR) DSS
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
ID = –4A, VGS = –10V
ID = –2A, VGS = –4V
ID = –4A, VDS = –10V
VDS = –10V, VGS = 0V, f = 1MHz
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
IS = –1.7A, VGS = 0V
Channel to ambiet
IS = –1.7A, dis/dt = 50A/µs
Min.
–30
—
—
–1.5
—
—
—
—
—
—
—
—
—
—
—
—
—
Limits
Typ.
—
—
—
–2.0
60
115
6
680
180
90
10
15
50
30
–0.88
—
70
Max.
—
±0.1
–0.1
–2.5
80
180
—
—
—
—
—
—
—
—
–1.20
78.1
—
Unit
V
µA
mA
V
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Aug. 1999