FY4AEJ-03 Datasheet, PDF (7/9 Pages) Renesas Technology Corp – HIGH-SPEED SWITCHING USE Nch/Pch POWER MOSFET

PRELIMINARY _{NSootmicee:pTahriasmisetnroict laimfiintsalasrepescuibficjeacttiotno.change.}
PERFORMANCE CURVES (P-ch)
POWER DISSIPATION DERATING CURVE
2.0
1.6
1.2
0.8
0.4
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS =–10V –8V –6V
–20
PD = 1.6W
–16
–5V
–12
Tc = 25°C
Pulse Test
–4V
–8
–4
–3V
0
0 –0.4 –0.8 –1.2 –1.6 –2.0
DRAIN-SOURCE VOLTAGE VDS (V)
–2.0
–1.6
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
Tc = 25°C
Pulse Test
–1.2
–0.8
–0.4
0
0
ID =–8A
–4A
–2A
–2 –4 –6 –8 –10
GATE-SOURCE VOLTAGE VGS (V)
MITSUBISHI POWER MOSFET
FY4AEJ-03
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
MAXIMUM SAFE OPERATING AREA
tw =
–5
–3
10µs
–2
–10¹
–7
–5
–3
–2
100µs
1ms
–10⁰
–7
–5
10ms
100ms
–3 _{TC = 25°C}
–2 _{Single Pulse}
–10^–1
–7
–5
DC
–3
–2 –3
–5–7–10⁰
–2 –3
–5 –7–10¹
–2 –3
–5
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
–10
VGS = –10V,–8V,–6V,–5V
PD = 1.6W
–8
–4V
–6
Tc = 25°C
–4
Pulse Test
–3V
–2
0
0 –0.2 –0.4 –0.6 –0.8 –1.0
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
VGS =–4V
160
120
Tc = 25°C
Pulse Test
80
–10V
40
0–10–_{1 –2 –3 –5 –7–100 –2 –3 –5 –7–101 –2 –3 –5 –7–102}
DRAIN CURRENT ID (A)
Aug. 1999