E2081606_PF08127B Datasheet, PDF (9/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

Characteristic Curves
GSM mode (880MHz to 915 MHz)
GSM mode (880 MHz) Pout, Eff vs. Vapc
40
100
30 ^{Pin = 0 dBm}
20 ^{Vdd = 3.5 V}
10
0
Vapc = control
Tc = 25°C
Pout
90
80
70
Eff 60
–10
50
–20
40
–30
30
–40
20
–50
10
–60
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
PF08127B
GSM mode (915 MHz) Pout, Eff vs. Vapc
40
100
30 ^{Pin = 0 dBm}
20 ^{Vdd = 3.5 V}
10
0
Vapc = control
Tc = 25°C
Pout
90
80
70
Eff ₆₀
–10
50
–20
40
–30
30
–40
20
–50
10
–60
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
GSM mode (880 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
40
Vapc = control
Tc = 25°C
30
20
10
0
0 5 10 15 20 25 30 35 40
Pout (dBm)
GSM mode (915 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
Vapc = control
40 _{Tc = 25°C}
30
20
10
0
0 5 10 15 20 25 30 35 40
Pout (dBm)
GSM mode (880 MHz) Pout, Eff vs. Pin
37.0
65
Vdd = 3.5 V
36.5 ^{Tc = 25°C}
60
Pout
36.0
55
35.5
Eff
50
35.0
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
34.5
–10 –8 –6 –4 –2 0 2 4 6
Pin (dBm)
45
40
8 10
GSM mode (915 MHz) Pout, Eff vs. Pin
37.0
65
Vdd = 3.5 V
36.5 ^{Tc = 25°C}
Eff
60
36.0
55
35.5
Pout
50
35.0
Pout:Vapc = 2.2 V
45
Eff:Pout = 35 dBm
34.5
40
–10 –8 –6 –4 –2 0 2 4 6 8 10
Pin (dBm)
Rev.0, Oct. 2002, page 7 of 14