E2081606_PF08127B Datasheet, PDF (12/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
DCS mode (1710MHz to 1785 MHz) (cont.)
DCS mode (1710 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 _{Tc = 25°C}
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30 40
Pout (dBm)
DCS mode (1785 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 _{Tc = 25°C}
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30 40
Pout (dBm)
DCS, PCS mode Pout, Eff vs. Freq
35
60
34
Pout
55
33
Vdd = 3.5 V
Tc = 25°C
50
Eff
32
45
31
Pout:Vapc = 2.2 V
40
Eff:Pout = 32.5 dBm
30
35
1600 1650 1700 1750 1800 1850 1900 1950 2000
Freq (MHz)
DCS mode Pout vs. Vdd
36
Pin = 0 dBm
Vapc = 2.2 V
35 Tc = 25°C
1710 MHz
34
1785 MHz
33
32
3 3.2 3.4 3.6 3.8 4 4.2 4.4
Vdd (V)
DCS mode (1710 MHz) Pout vs. Pin
36
Vapc = 2.2 V
35
Vdd = 3.5 V, Tc = 25°C
34
Vdd = 3.5 V, Tc = 85°C
33
Vdd = 3.1 V, Tc = 85°C
32
31
–8 –6 –4 –2 0 2 4 6 8
Pin (dBm)
DCS mode (1785 MHz) Pout vs. Pin
36
Vapc = 2.2 V
35
Vdd = 3.5 V, Tc = 25°C
34
33
Vdd = 3.5 V, Tc = 85°C
32
Vdd = 3.1 V, Tc = 85°C
31
–8 –6 –4 –2 0 2 4 6 8
Pin (dBm)
Rev.0, Oct. 2002, page 10 of 14