E2081606_PF08127B Datasheet, PDF (6/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
Electrical Characteristics for DCS1800 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1710 to 1785 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Frequency range
Band select (DCS active)
Input power
Control voltage range
Supply voltage
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
4th~8th harmonic distortion
Input VSWR
Output power (1)
Output power (2)
Idd at Low power
Isolation
Switching time
Stability
Load VSWR tolerance
Load VSWR tolerance
at GPRS CLASS 12
operation
Slope Pout/Vapc
AM output
Symbol
f
Vctl
Pin
Vapc
Vdd
η_T
2nd H.D.
3rd H.D.
4th~8th H.D.
VSWR (in)
Pout (1)
Pout (2)


t_r, t_f





Min
1710
0
–2
0.2
3.1
40




32.5
31.0
Typ


0

3.5
47
−14.5(–47)
−7.5(–40)

1.5
33.5
32.0
Max
1785
0.1
2
2.2
4.5

−2.5(–35)
−2.5(–35)
−2.5(–35)
3



—
150

−42
−37

1
2
No parasitic oscillation
> –36 dBm
No degradation
or
Permanent degradation
No degradation
or
Permanent degradation

160
200

15
20
Unit
MHz
V
dBm
V
V
%
dBm(dBc)
dBm(dBc)
dBm(dBc)

dBm
dBm
mA
dBm
µs



dB/V
%
Test Condition
Pout _DCS = 32.5 dBm,
Vapc = controlled
Vapc = 2.2 V
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +85°C,
Pout _DCS = 5 dBm
Vapc = 0.2 V
Pout _DCS = 0 to 32.5 dBm
Vdd = 3.1 to 4.5 V, Pout _DCS ≤ 32.5 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles
Vdd = 3.1 to 4.5 V, Pout _DCS ≤ 32.5 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω, t ≤ 20 sec.,
Output VSWR = 10 : 1 All phase angles
Vdd = 3.1 to 4.2 V, Pout _DCS ≤ 32.5 dBm,
Vapc ≤ 2.2 V,
Rg = 50 Ω, t ≤ 20 sec., Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
Pout _DCS = 0 to 32.5 dBm
Pout _DCS = 0 to 32.5 dBm,
4% AM modulation at input
50 kHz modulation frequency
Rev.0, Oct. 2002, page 4 of 14