E2081606_PF08127B Datasheet, PDF (3/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
MOS FET Power Amplifier Module
for E-GSM and DCS1800/1900 Triple Band Handy Phone
ADE-208-1606 (Z)
Rev.0
Oct. 2002
Application
• Triple band amplifier for
E-GSM (880 MHz to 915 MHz), DCS1800/1900 (1710 MHz to 1785 MHz, 1850 MHz to 1910 MHz).
• For 3.5 V & GPRS Class12 operation compatible
Features
• All in one including output matching circuit
• Simple external circuit
• Simple power control
• High gain 3stage amplifier : 0 dBm input Typ
• Lead less thin & Small package : 8.0 × 10.0 mm Typ × 1.5 mm Max
• High efficiency : 55% Typ at 35.0 dBm for E-GSM
47% Typ at 32.5 dBm for DCS1800
47% Typ at 32.0 dBm for DCS1900
Pin Arrangement
• RF-Q-8
8 ^{7G6 5}
1 ^{2G3 4}
1: Pin _GSM
2: Vapc
3: Vdd1
4: Pout _GSM
5: Pout _DCS
6: Vdd2
7: Vctl
8: Pin _DCS
G: GND