E2081606_PF08127B Datasheet, PDF (7/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0.2 V, Rg = Rl = 50 Ω, Tc = 25°C,
Pulse operation with pulse width 1154 µs and duty cycle 2:8 shall be used.
Item
Frequency range
Band select (DCS active)
Input power
Control voltage range
Supply voltage
Total efficiency
2nd harmonic distortion
3rd harmonic distortion
4th~8th harmonic distortion
Input VSWR
Output power (1)
Output power (2)
Idd at Low power
Isolation
Switching time
Stability
Load VSWR tolerance
Load VSWR tolerance
at GPRS CLASS 12
operation
Slope Pout/Vapc
AM output
Symbol
f
Vctl
Pin
Vapc
Vdd
η_T
2nd H.D.
3rd H.D.
4th~8th H.D.
VSWR (in)
Pout (1)
Pout (2)


t_r, t_f





Min
1850
0
–2
0.2
3.1
40




32.0
30.5
Typ


0

3.5
47
−15(–47)
−8(–40)

1.5
33.0
31.5
Max
1910
0.1
2
2.2
4.5

−3(–35)
−3(–35)
−3(–35)
3




150

−42
−37

1
2
No parasitic oscillation
> –36 dBm
No degradation
or
Permanent degradation
No degradation
or
Permanent degradation

160
200

15
20
Unit
Test Condition
MHz
V
dBm
V
V
%
dBm(dBc)
Pout _DCS = 32.0 dBm,
Vapc = controlled
dBm(dBc)
dBm(dBc)

dBm
Vapc = 2.2 V
dBm
Vdd = 3.1 V, Vapc = 2.2 V,
Tc = +85°C
mA
dBm
Pout _DCS = 5 dBm
Vapc = 0.2 V
µs
Pout _DCS = 0 to 32.0 dBm

Vdd = 3.1 to 4.5 V, Pout _DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω,
Output VSWR = 6 : 1 All phase angles

Vdd = 3.1 to 4.5 V, Pout _DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V, Rg = 50 Ω, t ≤ 20 sec.,
Output VSWR = 10 : 1 All phase angles

Vdd = 3.1 to 4.2 V, Pout _DCS ≤ 32.0 dBm,
Vapc ≤ 2.2 V,
Rg = 50 Ω, t ≤ 20 sec., Tc ≤ 90°C,
Output VSWR = 10 : 1 All phase angles
dB/V
%
Pout _DCS = 0 to 32.0 dBm
Pout _DCS = 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
Rev.0, Oct. 2002, page 5 of 14