E2081606_PF08127B Datasheet, PDF (10/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
GSM mode (880MHz to 915 MHz) (cont.)
GSM mode (880 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 _{Tc = 25°C}
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30 40
Pout (dBm)
GSM mode (915 MHz) Idd vs. Pout
10
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
1 _{Tc = 25°C}
0.1
0.01
–50 –40 –30 –20 –10 0 10 20 30 40
Pout (dBm)
GSM mode Pout, Eff vs. Freq
38
Vdd = 3.5 V
Eff
37 ^{Tc = 25°C}
36
Pout
35
34
33
700
Pout:Vapc = 2.2 V
Eff:Pout = 35 dBm
750 800 850 900 950
Freq (MHz)
60
55
50
45
40
35
30
1000
GSM mode Pout vs. Vdd
39
Vdd = 3.5 V
38 ^{Tc = 25°C}
Pout:Vapc = 2.2 V
37 ^{Eff:Pout = 35 dBm}
880 MHz
915 MHz
36
35
34
3 3.2 3.4 3.6 3.8 4 4.2 4.4
Vdd (V)
GSM mode (880 MHz) Pout vs. Pin
37
Vapc = 2.2 V
36
Vdd = 3.5 V, Tc = 25°C
Vdd = 3.5 V, Tc = 85°C
35
Vdd = 3.1 V, Tc = 85°C
34
33
–8 –6 –4 –2 0 2 4 6 8
Pin (dBm)
GSM mode (915 MHz) Pout vs. Pin
37
Vapc = 2.2 V
36
Vdd = 3.5 V, Tc = 25°C
35
Vdd = 3.5 V, Tc = 85°C
34
Vdd = 3.1 V, Tc = 85°C
33
–8 –6 –4 –2 0 2 4 6 8
Pin (dBm)
Rev.0, Oct. 2002, page 8 of 14