E2081606_PF08127B Datasheet, PDF (11/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

DCS mode (1710MHz to 1785 MHz)
DCS mode (1710 MHz) Pout, Eff vs. Vapc
40
100
30 ^{Pin = 0 dBm}
90
20 ^{Vdd = 3.5 V}
Pout
80
10
0
Vapc = control
Tc = 25°C
70
60
–10
Eff ₅₀
–20
40
–30
30
–40
20
–50
10
–60
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
PF08127B
DCS mode (1785 MHz) Pout, Eff vs. Vapc
40
100
30 ^{Pin = 0 dBm}
20 ^{Vdd = 3.5 V}
10
0
Vapc = control
Tc = 25°C
–10
Pout
90
80
70
60
Eff ₅₀
–20
40
–30
30
–40
20
–50
10
–60
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2
Vapc (V)
DCS mode (1710 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
40
Vapc = control
Tc = 25°C
30
20
10
0
0 5 10 15 20 25 30 35
Pout (dBm)
DCS mode (1785 MHz) Eff vs. Pout
60
Pin = 0 dBm
50 Vdd = 3.5 V
40
Vapc = control
Tc = 25°C
30
20
10
0
0 5 10 15 20 25 30 35
Pout (dBm)
DCS mode (1710 MHz) Pout, Eff vs. Pin
34.5
60
Vdd = 3.5 V
Pout
34.0 ^{Tc = 25°C}
55
33.5
50
33.0
Eff
45
32.5
Pout:Vapc = 2.2 V
Eff:Pout = 32.5 dBm
32.0
–10 –8 –6 –4 –2 0 2 4 6
Pin (dBm)
40
35
8 10
DCS mode (1785 MHz) Pout, Eff vs. Pin
34.5
60
Vdd = 3.5 V
34.0 ^{Tc = 25°C}
55
Pout
33.5
50
Eff
33.0
45
32.5
Pout:Vapc = 2.2 V
Eff:Pout = 32.5 dBm
32.0
–10 –8 –6 –4 –2 0 2 4 6
Pin (dBm)
40
35
8 10
Rev.0, Oct. 2002, page 9 of 14