E2081606_PF08127B Datasheet, PDF (4/16 Pages) Renesas Technology Corp – MOS FET Power Amplifier Module for E-GSM and DCS1800/1900 Triple Band Handy Phone

PF08127B
Absolute Maximum Ratings *¹
(Tc = 25°C)
Item
Symbol
Rating
Unit
Remark
Supply voltage
Vdd
7.0
V
at no-operation
5.0
V
at operation (50 Ω load)
Supply current
Vctl voltage
Idd _GSM
3.5
A
Idd _DCS
2
A
Vctl
4
V
Vapc voltage
Vapc
4
V
Input power
Operating case temperature *²
Pin
Tc (op)
10
−30 to +100
dBm
°C
Storage temperature
Tstg
−40 to +100
°C
Output power
Pout _GSM
5
W
Pout _DCS
3
W
Notes: 1. The maximum ratings shall be valid over both the E-GSM-band (880 to 915 MHz),
and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
2. These are specified at pulsed operation with pulse width = 1154 µsec and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test Condition
Drain cutoff current Ids


20
µA
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
Vapc control current Iapc


2.0
mA
Vapc = 2.2 V
Vctl control current Ictl


2
µA
Vctl = 3 V
Rev.0, Oct. 2002, page 2 of 14