HAT3036R Datasheet, PDF (8/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
• Common
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
1 _{Dri2veDOrivpeeOrapteiorantion}
0
50
100
150
200
Ambient Temperature Ta (°C)
Normalized Transient Thermal Impedance vs. Pulse Width(1 Drive Operation)
10
D=1
1 _0.5
0.2
0.1
0.1 _0.05
0.02
0.01
0.01
1shot
pulse
0.001
0.0001
10 μ 100 μ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
D=1
1 _0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
0.001
0.01
1shot ^pulse
0.0001
10 μ 100 μ 1 m
θch - f(t) = γs (t) x θch - f
θch - f = 210°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (S)
100 1000 10000
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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