HAT3036R Datasheet, PDF (5/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
Reverse Drain Current vs.
Source to Drain Voltage
10
10 V
5V
5
V_GS = 0 V, –5 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Dynamic Input Characteristics
100
I _D = 4.8 A
80
V _DD = 25V
10V
20
V_GS
16
60
12
40
8
V_DS
20
V _DD = 25V
4
10V
0
0
2
4
6
8
10
Gate Charge Qg (nC)
1000
500
200
100
50
Typical Capacitance vs.
Drain to Source Voltage
Ciss
Coss
20
Crss
10
5
2
V_GS = 0
f = 1 MHz
0
10
20
30
Drain to Source Voltage V_DS (V)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
V_DS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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