HAT3036R Datasheet, PDF (6/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
• P Channel
Maximum Safe Operation Area
-100
-10
-1
-0.1
PW ₌
DC _Operation
Operation in
this area is
limited by R_DS(on)
10 _ms
(PW _≤
1101m00s_μμss
(1shot)
1^N₀^o_s^te_{) 4}
-0.01
Ta = 25°C
-0.001 ^{1 shot Pulse}
-0.1
-1
-10
-100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
–10
-10 V ^{-4.2 V} Pulse Test
-4.5 V
-4.0 V
-3.8 V
–5
-3.6 V
-3.4 V
-3.2 V
V_GS = -3.0 V
0
–5
–10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
–750
Gate to Source Voltage
Pulse Test
–600
–450
–300
I_D = –5 A
–150
0
–4 –8 –12
Gate to Source Voltage
–2 A
–1 A
–16 –20
V_GS (V)
Typical Transfer Characteristics
–10
V_DS = -10 V
Pulse Test
–5
Tc = 75°C
25°C
-25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
1000
vs. Drain Current
Pulse Test
100 _{VGS = –4.5 V}
–10 V
10
–0.1
–1
–10
Drain Current I_D (A)
–100
Static Drain to Source on State Resistance
vs. Temperature
200
Pulse Test
160
I_D = –1 A, –2 A, –5 A
120
V_GS = -4.5 V
80
40
-10 V
–1 A, –2 A, –5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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