HAT3036R Datasheet, PDF (7/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
Reverse Drain Current vs.
Source to Drain Voltage
–10
–5 V
–5
V_GS = 0V, 5 V
Pulse Test
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Dynamic Input Characteristics
0
0
V_DD = –10 V
–25 V
–20
–4
V_DS
–40
–8
–60 _{VDD = –25 V}
–10 V
–80
–12
V_GS
–16
–100
0
I_D = – 4.8 A
4
8
12
16
Gate Charge Qg (nC)
–20
20
10000
5000
Typical Capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
2000
1000
500
Ciss
200
100
Coss
50
Crss
20
10
0
–10
–20
–30
Drain to Source Voltage V_DS (V)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
-10 V
V_DD
= -10 V
Switching Time Waveform
Vin
10%
90%
90%
90%
Vout
td(on)
10%
tr
td(off)
10%
t_f
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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