HAT3036R Datasheet, PDF (2/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
Electrical Characteristics
• N Channel
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS
30
Gate to source breakdown voltage V(BR)GSS ±20
Gate to source leak current
IGSS
—
Zero gate voltage drain current
IDSS
—
Gate to source cutoff voltage
VGS(off)
1.0
Static drain to source on state
resistance
RDS(on)
—
RDS(on)
—
Forward transfer admittance
|yfs|
3.6
Input capacitance
Ciss
—
Output capacitance
Coss
—
Reverse transfer capacitance
Crss
—
Total gate charge
Qg
—
Gate to source charge
Qgs
—
Gate to drain charge
Qgd
—
Turn-on delay time
td(on)
—
Rise time
tr
—
Turn-off delay time
td(off)
—
Fall time
tf
—
Body–drain diode forward voltage
VDF
—
Body–drain diode reverse
recovery time
trr
—
Notes: 4. Pulse test
Typ
—
—
—
—
—
40
60
6.0
260
70
30
2.2
1.0
0.8
7.0
17.5
35.5
3.8
0.88
18
Max
—
—
± 10
1
2.5
50
87
—
—
—
—
—
—
—
—
—
—
—
1.15
—
(Ta = 25°C)
Unit
Test Conditions
V
ID = 10 mA, VGS = 0
V IG = ±100 A, VDS = 0
A
VGS = ±16 V, VDS = 0
A
VDS = 30 V, VGS = 0
V
VDS = 10 V, I D = 1 mA
m ID = 2.4 A, VGS = 10 V ^Note4
m ID = 2.4 A, VGS = 4.5 V ^Note4
S
ID = 2.4 A, VDS = 10 V ^Note4
pF VDS = 10 V
pF
VGS = 0
pF ^{f = 1 MHz}
nC VDD = 10 V
nC ^VGS ^{= 4.5 V}
nC ^{ID = 4.8 A}
ns
VGS = 10 V, ID = 2.4 A
ns
VDD  10 V
ns
RL = 4.16 
ns
Rg = 4.7 
V
IF = 4.8 A, VGS = 0 ^Note4
ns IF = 4.8 A, VGS = 0
diF/ dt = 100 A/ s
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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