HAT3036R Datasheet, PDF (3/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
• P Channel
Item
Drain to source breakdown
voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
–30
-20/+10
—
—
–1.0
—
—
3.0
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
50
75
5.0
505
125
70
4.7
1.5
1.2
16
15
32
7
–0.88
35
Max
—
—
±10
–1
–2.5
63
109
—
—
—
—
—
—
—
—
—
—
—
–1.15
—
(Ta = 25°C)
Unit
Test Conditions
V
ID = –10 mA, VGS = 0
V IG = ±100 A, VDS = 0
A VGS = –16,+8 V, VDS = 0
A VDS = –30 V, VGS = 0
V
VDS = –10 V, I D = –1 mA
m ID = –2.4 A, VGS = –10 V ^Note4
m ID = –2.4 A, VGS = – 4.5 V ^Note4
S
ID = –2.4 A, VDS = –10 V ^Note4
pF VDS = –10 V
pF
VGS = 0
pF ^{f = 1MHz}
nC VDD = –10 V
nC ^VGS ^{= –4.5 V}
nC ^{ID = -4.8 A}
ns VGS = –10 V, ID = –2.4 A
ns
VDD  –10 V
ns
RL = 4.16 
ns
Rg = 4.7 
V
IF = –4.8 A, VGS = 0 ^Note4
ns IF = –4.8 A, VGS = 0
diF/ dt =100A/µs
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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