HAT3036R Datasheet, PDF (1/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
Silicon N/P Channel Power MOSFET
Power Switching
Features
 Capable of 4.5 V gate drive
 Low drive current
 High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DAV>)
8765
1234
78
56
DD
DD
2
4
G
G
S1
N ch
S3
P ch
Data Sheet
R07DS1373EJ0501
Rev.5.01
Jan 20, 2017
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Ratings
Nch
Pch
Drain to source voltage
VDSS
30
–30
Gate to source voltage
VGSS
±20
-20/+10
Drain current
Drain peak current
ID
ID(pulse)Note1
4.8
38.4
–4.8
–38.4
Body-drain diode reverse drain current
Channel dissipation
IDR
Pch ^Note2
4.8
–4.8
1.3
Channel dissipation
Pch ^Note3
2.0
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW  10s
(Ta = 25°C)
Unit
V
V
A
A
A
W
W
C
C
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
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