HAT3036R Datasheet, PDF (4/11 Pages) Renesas Technology Corp – Silicon N/P Channel Power MOSFET

HAT3036R
Main Characteristics
• N Channel
Maximum Safe Operation Area
100
10
10 _μs
1
0.1
OtlihmpisietearadretiboayDnisCRin_D^O_S^p₍^e_o^Pr_n^Wa₎^tio=n1(0PmWs_≤^(11110s_N0m0hosot^sμ_e)ts)4
0.01
Ta = 25°C
0.001 ^{1 shot Pulse}
0.1
1
10
100
Drain to Source Voltage V_DS (V)
Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
10
4.5 V
10 V
3.8 V
3.6 V
3.4 V
5
3.2 V
3.0 V
Pulse Test
V_GS = 2.8 V
0
5
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs
Gate to Source Voltage
500
Pulse Test
400
300
200
I_D = 5 A
100
2A
1A
0
5
10
15
20
Gate to Source Voltage V_GS (V)
R07DS1373EJ0501 Rev.5.01
Jan 20, 2017
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
5
Tc = 75°C
25°C
-25°C
0
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
1000
vs. Drain Current
100
V_GS = 4.5 V
10 V
10
0.1
Pulse Test
1
10
100
Drain Current I_D (A)
Static Drain to Source on State Resistance
vs. Temperature
150
Pulse Test
120
1 A, 2 A, 5 A
90
V_GS = 4.5 V
60
30
10 V
1 A, 2 A, 5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
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