HAT2166H Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
3
D=1
1
0.5
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
0.3 _0.2
0.1
0.1
0.05
0.02
0.03
0.011shot _pulse
0.01
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 5.0°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
VDS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.5.00, Apr.09.2003, page 8 of 10