HAT2166H Datasheet, PDF (2/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
V_DSS
V_GSS
I_D
I_{D(pulse)Note1}
I_DR
I_AP ^{Note 2}
E_AR ^{Note 2}
Pch ^Note3
Channel to Case Thermal Resistance θch-C
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. Tc = 25°C
Ratings
30
±20
45
180
45
25
62.5
25
5.0
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Apr.09.2003, page 2 of 10