HAT2166H Datasheet, PDF (5/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2166H
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
250
Pulse Test
200
I D = 50 A
150
100
20 A
50
10 A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
10
Pulse Test
5
V_GS = 4.5 V
10 V
2
1
1 3 10 30 100 300 1000
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
8
Pulse Test
50 A
6
I D = 10 A, 20 A
V _GS = 4.5 V
4
2
10 V
10 A, 20 A, 50 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
1000
Forward Transfer Admittance vs.
Drain Current
300
100 _{Tc = -25°C}
30
10
75°C
25°C
3
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)
Rev.5.00, Apr.09.2003, page 5 of 10